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Results 1 to 25 of 38

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Transmission electron microscopy study of stacking-fault trapezoids and stacking-fault tubes in ZnSe/GaAs(001) pseudomorphic epitaxial layersWANG, N; SOU, I. K; FUNG, K. K et al.Philosophical magazine letters. 1997, Vol 76, Num 3, pp 153-158, issn 0950-0839Article

Shubnikov-de Haas oscillations on molecular-beam-epitaxy-grown Hg1-xCdxTe alloy doped with indiumRAFOL, S. B; SOU, I. K; FAURIE, J. P et al.Journal of applied physics. 1991, Vol 70, Num 8, pp 4326-4331, issn 0021-8979Article

MBE-grown Fe nanowires on a ZnS(100) surfaceLOK, S. K; CHAN, S. K; WONG, G. K. L et al.Journal of crystal growth. 2009, Vol 311, Num 7, pp 2208-2211, issn 0022-0248, 4 p.Conference Paper

Observation of negative differential resistance from a Schottky-barrier structure embedded with Fe quantum dotsLOK, S. K; LI, B. K; WANG, J. N et al.Journal of crystal growth. 2009, Vol 311, Num 7, pp 2155-2159, issn 0022-0248, 5 p.Conference Paper

Time-resolved absorption studies of the ZnSe/ZnSTe superlatticeWANG, H; SOU, I. K; WONG, G. K. L et al.Superlattices and microstructures. 2001, Vol 29, Num 4, pp 301-307, issn 0749-6036Article

Znmgs-based solar-blind UV photodetectors grown by MBESOU, I. K; WU, Marcus C. W; WONG, K. S et al.Journal of crystal growth. 2001, Vol 227-28, pp 705-709, issn 0022-0248Conference Paper

SIMS study of Al thermal diffusion in MBE-grown sandwiched-ZnSTe structuresMA, Z. H; SMITH, T; SOU, I. K et al.Journal of crystal growth. 1999, Vol 201202, pp 470-473, issn 0022-0248Conference Paper

Shubnikov-de Haas oscillations on as-grown and annealed molecular-beam-epitaxy-grown Hg1-xCdxTe alloys doped with indiumRAFOL, S. B; WIJEWARNASURIYA, P. S; SOU, I. K et al.Journal of applied physics. 1993, Vol 73, Num 1, pp 216-225, issn 0021-8979Article

Role of the crystallographic orientation on the incorporation of indium in HgCdTe epilayers grown by molecular beam epitaxySOU, I. K; WIJEWARNASURIYA, P. S; BOUKERCHE, M et al.Applied physics letters. 1989, Vol 55, Num 10, pp 954-956, issn 0003-6951, 3 p.Article

Growth and characterization of Hg1-xMnx Te grown by molecular beam epitaxyRENO, J; SOU, I. K; WIJEWARNASURIYA, P. S et al.Applied physics letters. 1985, Vol 47, Num 11, pp 1168-1169, issn 0003-6951Article

MBE-Grown II-VI and Related NanostructuresSOU, I. K; LOK, S. K; WANG, G et al.Journal of electronic materials. 2010, Vol 39, Num 7, pp 882-892, issn 0361-5235, 11 p.Conference Paper

Growth temperature dependence of the structural and photoluminescence properties of MBE―grown ZnS nanowiresLOK, S. K; WANG, G; CAI, Y et al.Journal of crystal growth. 2009, Vol 311, Num 9, pp 2630-2634, issn 0022-0248, 5 p.Article

Growth temperature dependence of MBE-grown ZnSe nanowiresCHAN, S. K; CAI, Y; WANG, N et al.Journal of crystal growth. 2007, Vol 301-302, pp 866-870, issn 0022-0248, 5 p.Conference Paper

MBE-grown Au-island-catalyzed ZnSe nanowiresCHAN, S. K; CAI, Y; SOU, I. K et al.Journal of crystal growth. 2005, Vol 278, Num 1-4, pp 146-150, issn 0022-0248, 5 p.Conference Paper

Optical anisotropy of the ZnSe/GaAs interfaceYANG, Z; SOU, I. K; YEUNG, Y. H et al.Journal of crystal growth. 1996, Vol 159, Num 1-4, pp 741-745, issn 0022-0248Conference Paper

High-resolution X-ray diffraction study of ZnSe/GaAs heterostructures grown by molecular beam epitaxySOU, I. K; MOU, S. M; CHAN, Y. W et al.Journal of crystal growth. 1995, Vol 147, Num 1-2, pp 39-46, issn 0022-0248Article

Hole Hall-mobility enhancement in HgTe-Hg1-xCdxTe heterojunctionsFAURIE, J. P; SOU, I. K; WIJEWARNASURIYA, P. S et al.Physical review. B, Condensed matter. 1986, Vol 34, Num 8, pp 6000-6002, issn 0163-1829, part 2Article

Spontaneous vortex dynamics in superconducting FeTe thin filmsHE, H. T; WANG, G; LIU, H. C et al.Solid state communications. 2014, Vol 195, pp 35-38, issn 0038-1098, 4 p.Article

Detectivity studies of SMD-packaged ZnSSe and ZnMgS UV detectorsMAK, L. S; CHAN, S. K; WONG, G. K. L et al.Journal of electronic materials. 2006, Vol 35, Num 6, pp 1322-1326, issn 0361-5235, 5 p.Conference Paper

MBE growth and structural characterization of ZnS1-xSex thin films on ITO/glass substratesSHEN, D; AU, S. Y; HAN, G et al.Journal of materials science letters. 2003, Vol 22, Num 6, pp 483-487, issn 0261-8028, 5 p.Article

ZnSSe-based ultra-violet photodiodes with extremely high detectivityLAI, L. S; SOU, I. K; LAW, C. W. Y et al.Optical materials (Amsterdam). 2003, Vol 23, Num 1-2, pp 21-26, issn 0925-3467, 6 p.Conference Paper

Temperature dependence of the responsivity of ZnS-based UV detectorsSOU, I. K; MA, Z. H; ZHANG, Z. Q et al.Journal of crystal growth. 2000, Vol 214-15, pp 1125-1129, issn 0022-0248Conference Paper

DX-like centers in n-type Al-doped ZnS1-xTex grown by molecular-beam epitaxyLIWU LU; MAK, K. K; MA, Z. H et al.Journal of crystal growth. 2000, Vol 216, Num 1-4, pp 141-146, issn 0022-0248Article

Visible-blind ultra-violet detectors with nano-second response timeMA, Z. H; SOU, I. K; WONG, K. S et al.Journal of crystal growth. 1999, Vol 201202, pp 968-970, issn 0022-0248Conference Paper

Raman scattering and photoluminescence of ZnSxTe1-x mixed crystalsLIU, N. Z; LI, G. H; ZHU, Z. M et al.Journal of physics. Condensed matter (Print). 1998, Vol 10, Num 18, pp 4119-4129, issn 0953-8984Article

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